Abstract
We demonstrate a dual-gate (DG) AlGaN/GaN high-electron-mobility transistor (HEMT) structure with enhancement-mode (E-mode) operation. The DG device consists of an E-mode gate and a depletion-mode (D-mode) gate instead of the dual D-mode gate electrodes used in previously reported works; thus no negative voltage supply is required when the DG device is used in amplifier circuits. The E-mode DG HEMTs exhibit similar DC characteristics to E-mode single-gate devices but show a 9 dB gain improvement at 2.1 GHz under the same bias conditions. The power gain improvement can be attributed to the higher output impedance and lower feedback capacitance in the DG structure.
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