Performance Analysis of Normally-on Dual Gate Algan/Gan Hemt

Abstract

This paper presents the novel normally-on dual gate (DG) AlGaN/GaN high electron mobility transistor. At high frequency, the dual gate structure gives superlative immunity over short channel effects. Multiple 2DEG channel regions in dual gate AlGaN/GaN HEMT improves the transport characteristics, charge control and gives better linearity. The high carrier mobility and electron saturation velocity contribute to the high switching frequency of DG HEMT. The drain characteristics of single gate HEMT and dual gate HEMT are compared and DG HEMT outstands in drain current. The various analog and linearity parameters are investigated for DG HEMT. The performance analysis provides better transconductance, capacitance, cut off frequency, subthreshold slope and on-resistance simulations represents the potential of DG HEMT. The DG HEMT provides 1100 mA/mm ION, 550 mS/mm transconductance and 11 GHz cutoff frequency at Vgs = 2 V. The high drain current, better transconductance and cutoff frequency results in better sensitivity of device.