Gain-enhanced 132–160 GHz low-noise amplifier using 0.13 [micro sign]m SiGe BiCMOS

Abstract

A 132–160 GHz low-noise amplifier (LNA) in 0.13 µm SiGe BiCMOS technology is presented. The gain-boosting technique and 3D grounded-shielding structures have been employed to achieve higher gain with lower power consumption and silicon occupation. The experimental results show that the LNA with a chip area of 400 × 900 µm achieves gain of 21 dB with a 3 dB bandwidth of 28 GHz and noise figure of 8.5 dB at 145 GHz, with total DC power consumption of 14.5 mW.