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https://doi.org/10.1109/cleopr.2005.1569382
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Cite Publication Date: Aug 30, 2005 |
 Citations: 5 |
Affiliation: Technische Universität Berlin
The first near 1300 nm electrically-injected vertical cavity surface emitting lasers containing sheets of self-assembled InAs/InGaAs quantum dot active regions grown on GaAs substrates that emit over 1 mW continuous wave peak power at room temperature are demonstrated.
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