Abstract
GaAs nanowhiskers were grown by metal-organic vapor-phase epitaxy on (111)B GaAs substrates. The diameter of the nanowhiskers was defined by monodisperse Fe nanoparticles deposited on the GaAs substrate from the vapor phase. The growth temperature of the whiskers was investigated from 480to520°C. The whiskers are preferentially directed along the crystal orientations of ⟨001⟩, ⟨111⟩, and their equivalents. High-resolution transmission electron microscopy characterization including energy disperse x-ray spectroscopy measurements revealed not only iron oxide but also arsenic inside the seed particle at the top of the GaAs whiskers. This indicates that the particle stays at the top during the whisker growth.
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