Electrically injected $1.64\ \boldsymbol{\mu} \mathbf{m}$-emitting In0.65Ga0.35As 3-QW laser diodes grown on mismatched substrates by MOVPE

Abstract

High-performance quantum well laser diodes, which emit near the telecom C-band ( $\sim 1.55\mu \mathrm{m}$ ), are realized by employing an InP metamorphic buffer layer (MBL) with dislocation filters on either GaAs or Si substrates by metal-organic vapor phase epitaxy (MOVPE). Devices with an In 0.65 Ga 0.35 As 3-quantum well (QW) active region grown on a GaAs substrate with InP MBL and InAs QW dislocation filters (DF) exhibit laser emission ( $\lambda_{\text{lasing}}$ ) at 1654 nm with a threshold current density (J th ) of 0.96 kA/cm2 and the slope efficiency ( $\eta_{\text{slope}}$ ) of 0.13 W/A. The same device structure grown on Si substrate with an InP MBL and InAs quantum dot DF exhibits $\lambda_{\text{lasing}}\sim 1623 \text{nm}, \mathrm{J}_{\text{th}}\sim 1.56\text{kA}/\text{cm}^{2}$ and $\eta_{\text{slope}}\sim 0.0265\mathrm{W}/\mathrm{A}$ at 298 K under pulsed current injection. For comparison, the threshold current density and slope efficiency values from devices grown on an InP substrate are 0.6 kA/cm2 and 0.174 W/A respectively. The characteristic temperature coefficients of the threshold current (To) and slope efficiency (T 1 ) for devices on either InP (T 0 ∼52K, T 1 ∼150K), GaAs (T 0 ∼51K, T 1 ∼113K), or Si (T 0 ∼41K, T 1 ∼53K) substrate are compared and discussed.