GaAs surface passivation by ultra-thin epitaxial GaP layer and surface As–P exchange

Abstract

The GaAs surface passivation effects of epitaxially grown ultra-thin GaP layers and surface As–P exchange have been investigated. Optical properties of passivated and unpassivated InGaAs/GaAs near-surface quantum wells (QWs) grown by metal organic vapor phase epitaxy (MOVPE) are studied by low-temperature continuous-wave and time-resolved photoluminescence (PL). By optimizing the growth conditions, smooth surface morphologies and significant improvement of optical properties were observed for both passivation methods. Passivation improved the PL intensity more than two orders of magnitude and notably increased the PL decay time.