Abstract
Ultrathin gallium nitride passivation layers grown in situ on near-surface In x Ga 1 - x As / GaAs quantum wells using metalorganic vapour-phase epitaxy (MOVPE) with dimethylhydrazine as nitrogen source are reported. Nitridation of GaAs using DMHy during the post-growth cool-down is also studied. The effect of passivation on the surface recombination rate of quantum well (QW) structures is characterized using low-temperature (10 K) photoluminescence. Measured after growth, the GaN passivation is shown to enhance the PL intensity of the near-surface QWs approximately by a factor of 20. For samples stored in ambient air for 5 months, the enhancement is nearly 10 3 . The results suggest that MOVPE-grown thin GaN layers are applicable to GaAs surface passivation.
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