Abstract
Photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS) study is performed on unpassivated and passivated AlGaAs/GaAs near-surface quantum wells (QWs) in order to clarify the mechanism of the recently found large PL intensity increase which was achieved by a novel interface control technique utilizing a SiO2/Si3N4/Si structure including an ultrathin silicon interface control layer (Si ICL). It is shown that the novel Si ICL technique produces a coherent interface structure free of oxides and nitrides, and this removes surface states without introducing additional confined electronic states that interfere with the fundamental e1-hh1 transition of the near-surface QW. The present technique seems to be applicable to passivation of various kinds of compound semiconductor quantum structures.
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