Abstract
A novel passivation scheme using an ultrathin molecular beam epitaxy (MBE) silicon interface control layer (ICL) and an ultrathin silicon nitride layer is investigated for use in the passivation of compound semiconductor quantum structures. Process optimization was performed by in-situ X-ray photoelectron spectroscopy (XPS) and electrical characterization of the insulator-semiconductor interface formed on In0.53Ga0.47As. A drastic reduction of interface state density into the 1010 cm-2·eV-1 range was obtained under optimum condition. The passivation scheme was then applied to passivation of Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As near-surface quantum wells. Remarkable recovery of photoluminescence (PL) intensity was observed upon application of the present passivation scheme to the barrier surface, which was consistent with the reduction of surface states.
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