Abstract
AbstractLaser operation ofp-n junctions in GaAs doped with amphoteric impurities is demonstrated. The previous limitation to laser operation of such junctions caused by the broad spatial spread of the injected carriers (electrons), and their consequent low density at a given current level, can be overcome with a heterojunction reflecting barrier juxtaposed within a diffusion length of the junction. The effect of the barrier is great enough to allow significant stimulated emission to occur in GaAs (p-type GaAs : Ge and GaAs : Si) not previously lased in junction structures, and at current levels 10 × lower than those that have been previously inadequate.
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