Abstract
Abstract Ths wavelength shift with cavity Q in GaAs junction lasers with exponential band tails as experimentally observed eleswhere is related to the characteristic energies of the distribution of the tail states in both the conduction and valence bandfl. A method is then proposed for determining the band-tailing parameters in GaAs junction lasers from measurements of the wavelength shift with cavity Q and the linewidth of spontaneous emission preceding laser action. The accuracy of the method will be fairly high since the measurements on which the method is based could be done precisely and also since the assumptions involved in the method are quite valid under most of the practical situations.
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