GaAs–Gax Al1−x As heterostructure lasers with amphoterically silicon-doped active regions

Abstract

Amphoterically silicon-doped GaAs heterostructure lasers were fabricated using solution epitaxial growth of GaAs and GaAlAs in a sliding boat system. LOC lasers and double-heterostructure lasers were obtained. The emission wavelength was between 9040 and 9250 Å. Threshold current densities were typically 12–4 kA cm−2, with 2.4 kA cm−2 as the lowest value observed with a double heterostructure.