Abstract
We are reporting on the performance of GaAs/Ga0.65Al0.35As surface emitting (SE) lasers with a Ga0,Al0.1As/AlAs multilayer Bragg reflector grown by OMVPE. The measured reflectivity of the Bragg reflector was 96% at λ=0.88 μm. In the DBR SE laser, a multilayer Bragg reflector was used as a rear mirror with high reflectivity, and a light output was obtained through a front mirror with the high reflectivity of an Au/SiO2 semitransparent mirror. Fabricated DBR SE lasers were operated under room-temperature pulsed conditions. The threshold current was 95 mA. The slope effeciency was 0.04 mW/mA. The lasing wavelength was 882 nm and the longitudinal mode spacing was about 12 nm.
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