G-R noise and microscopic defects in irradiated junction field effect transistors

Abstract

Measurements and analysis of noise in electron bombarded Junction Gate Field Effect Transistors (JFETs) in the temperature range of 300-90°K are presented. The noise frequency spectra in the range of 100–600 kHz have been predicted theoretically, using the reported values of defect energy levels and capture cross sections. Excellent matching has been observed between the theoretical and measured noise spectra. A numerical analysis reveals that, except at room temperature, the generation recombination (g-r) noise due to the Shockley-Reed-Hall (S-R-H) centers in the depletion region is negligible as compared to that in the channel. It is also shown that noise measurements and analysis can be used as a tool in the determination of microscopic parameters such as the defect energy levels, capture cross sections and the density of defects, in radiation effect studies on semiconductors.