Abstract
We report on the measurements of the g-factor and the exchange interaction of electrons in a few-electron lateral quantum dot formed in an InGaAs/InP semiconductor heterostructure. The spin filling sequence of the electron states in the dot is determined by magnetotransport measurements and parallel spin filling configurations are identified. The measured g-factor (for a magnetic field applied parallel to the InGaAs quantum-well layer) has a value in the range of |g∗|≈2 to |g∗|≈4 and is strongly level-dependent. By analysis of the energies of the states which favor a parallel spin filling, the lower bound of the exchange energy of electrons in the dot in the order of ∼210 μeV is extracted.
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