Abstract
We propose semi-planar silicon-on-insulator (SOI) metal oxide semiconductor field effect transistors (MOSFETs) in which the short channel effect is suppressed while a sufficient value of the body effect factor is maintained. The sufficient body effect is essential in suppressing the device characteristic fluctuations in the deep sub-100 nm regime by adaptive substrate bias control. It is shown that the optimum device design is changed when we take the body effect factor into consideration. As examples of semi-planar SOI MOSFETs, a triangular channel structure and a FinFET structure with low aspect ratio are investigated by simulation and experiment. The short channel effect is suppressed due to a three-dimensionally patterned gate structure and the body effect factor is maintained due to the relatively low aspect ratio of the channel. Simulation and experiment clearly demonstrate the superiority of semi-planar SOI MOSFETs.
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