Performance Analysis of Cntfet and Mosfet Focusing Channel Length, Carrier Mobility and Ballistic Conduction in High Speed Switching

Abstract

Enhancement of switching in nanoelectronics, Carbon Nano Tube (CNT) could be utilized in nanoscaled Metal Oxide Semiconductor Field Effect Transistor (MOSFET). In this revi ew, we present an in depth discussion of performances Carbon Nanotube Field Effect Transistor (CNTFET) and its significance in nanoelectronic circuitry in comparison with Metal Oxide Semiconductor Field Effect Transistor (MOSFET). At first, we have discuss ed the structural unit of Carbon Nanotube and characteristic electrical behaviors beteween CNTFET and MOSFET. Short channel effect and effects of scattering and electric field on mobility of CNTFET and MOSFET have also been discussed. Besides, the nature o f ballistic transport and profound impact of gate capacitance along with dielectric constant on transconductance have also have been overviewed. Electron ballistic transport would be the key in short channel regime for high speed switching devices. Finally, a comparative study on the characteristics of contact resistance over switching capacity between CNTFET and MOSFET has been addressed.