Abstract
The problem of expedient limitations on the blocking voltage of SiC rectifier diodes is considered, with a full set of nonlinear physical phenomena responsible for the energy loss in semiconductor structures taken into account. The physical nature of the limitations on the blocking voltage is analyzed. It is shown that Auger recombination is the most important physical effect that restricts the blocking capability of high-voltage SiC diodes. It is demonstrated that the advisability of using a single diode or several in-series-connected diodes depends on the W/L ratio (W is the base width, and L is the ambipolar diffusion length) and temperature. A method that can be used to determine the optimal parameters of SiC power diode structures is suggested.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
