Abstract
It is shown that, in the base region of Schottky diodes, at current densities j higher than a certain value jst1, quasi-neutral drift-stimulated diffusion is implemented along with diffusion transport. The effect of this newly discovered mode in the I–V characteristics of Schottky diodes at high current densities is investigated. It is demonstrated that, when the ratio between the base width W and the ambipolar diffusion length L is higher than unity, a negative-differential-resistance portion appears in the I–V characteristics of Schottky diodes. The results of the analytical study are checked and confirmed by numerical calculation.
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