Abstract
Many device scientists believe that current Ultra Large Scale Integration (ULSI) technology will face technical and economic difficulties in further miniaturization. It has been proposed that 1-dimensional (1-D) transistors with connecting wires and three-dimensionally stacked structures may replace current field effect transistors with planar integration structures. We propose a new scheme to fabricate and integrate 1-D active devices. As a first step, we show the way to form 1-D wires with spatially variable electronic structures and the way to characterize them.
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