Abstract
Many device scientists believe that current Ultra Large Scale Integration (ULSI) technology will face technical and economic difficulties in further miniaturization. It has been predicted that 1‐dimensional (1‐D) transistors with connecting wires in three‐dimensionally stacked structures may replace current field effect transistors in planar integration structures. We propose a new scheme to fabricate and integrate 1‐D active devices. As a first step, we show the way to form 1‐D wires with spatially variable electronic structures and the way to characterize them.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
