Abstract

Graphene’s unique photoresponse has been largely used in a multitude of optoelectronics applications ranging from broadband photodetectors to wave-guide modulators. In this work we extend the range of applications to position-sensitive photodetectors (PSDs) using FeCl3-intercalated hexagonal domains of graphene grown by atmospheric pressure chemical vapour deposition (APCVD). The FeCl3-based chemical functionalisation of APCVD graphene crystals is affected by the presence of wrinkles and results in a non-uniform doping of the graphene layers. This doping profile creates multiple p–p+ photoactive junctions which show a linear and bipolar photoresponse with respect to the position of a focused light spot, which is ideal for the realization of a PSD. Our study paves the way towards the fabrication of flexible and transparent PSDs that could be embedded in smart textile and wearable electronics.

Highlights

  • The isolation of a single layer of graphene [1] has triggered an immense response in the scientific community in the past decade [2, 3]

  • In this work we present the first chemical functionalisation of multilayer hexagonal domains of graphene grown by atmospheric pressure chemical vapour deposition (APCVD) [13] and demonstrate its use as an all-graphene position sensitive detectors (PSDs)

  • Multilayer hexagonal domains of graphene were grown on copper by APCVD [21] using a melting/re-solidification pretreatment step to reduce nucleation density and increase domain size

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Summary

Introduction

The isolation of a single layer of graphene [1] has triggered an immense response in the scientific community in the past decade [2, 3]. Both the exceptional electrical and optical properties of this material have been studied in detail and exploited in many areas of pure and applied research. The photoresponse of graphene PDs has been investigated with many techniques, though so far no reports have been made of its application in position sensitive detectors (PSDs) Such devices traditionally consist of a semiconductor (Si or Ge) junction with four contacts, which

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