Raman spectroscopy and imaging of Bernal‐stacked bilayer graphene synthesized on copper foil by chemical vapour deposition: growth dependence on temperature

Abstract

We report on the effect of temperature on the growth of bilayer graphene on a copper foil under atmospheric pressure chemical vapour deposition (AP‐CVD). Before characterization of the AP‐CVD bilayer graphene, a high‐quality graphene flake was obtained from the Kish bulk graphite by micro‐mechanical exfoliation and characterized by using Raman spectroscopy and imaging. The Raman data of the exfoliated, high‐quality graphene flake show monolayer and bilayer graphenes and were compared with the Raman data of AP‐CVD graphene. Raman spectroscopy of AP‐CVD graphene shows bilayer films that exhibit predominantly Bernal stacking with an I2D/IG ratio of ~1. At low growth temperature (~780 °C), Raman disorder‐related peak intensity in the AP‐CVD graphene is high and decreases with an increase in growth temperature to the lowest disorder intensity at ~973 °C. The selected area electron diffraction and atomic force microscopy average step height analysis showed the thickness of the bilayer graphene. The AP‐CVD graphene is uniform at low growth temperatures (~780 °C) with a high disorder and becomes non‐uniform at high growth temperatures (~867–973 °C) with a very low disorder as bilayer graphene evolves to form islands with an average lateral size of <10 μm. Competition between carbon adatoms supply through dehydrogenation of the CHx species, mobility and desorption rate of the carbon‐adatom species for nucleation of the bilayer graphene as a function of temperature is elucidated. This study provides further insight into the growth mechanisms of bilayer graphene by AP‐CVD on Cu. Copyright © 2017 John Wiley & Sons, Ltd.