Abstract
This study demonstrates the feasibility of producing an InGaZnO thin-film transistor (TFT) using a high-κ germanium oxide (GeO2)/titanium oxide (TiO2)/GeO2 gate stack on a flexible polycarbonate substrate. The flexible TFT exhibited a small sub-threshold swing of 0.132V/decade, an acceptable field effect mobility of 8cm2/(Vs), and a robust Ion/Ioff ratio of 2.4×107. The improved device performance can be attributed to the combined effect of high-κ TiO2 and the large band gap of GeO2 that exhibits a tendency to remain in a Ge4+ oxidation state at room temperature.
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