Abstract
This paper describes how the power efficiency of fully integrated Dickson charge pumps in high- voltage IC technologies can be improved considerably by implementing charge recycling techniques, by replacing the normal PN junction diodes by pulse-driven active diodes, and by choosing an appropriate advanced smart power IC technology. A detailed analysis reveals that the combination of these 3 methods more than doubles the power efficiency compared to traditional Dickson charge pump designs.
Highlights
Integrated charge pumps are used in a wide variety of applications, going from flash memories over dedicated display drivers to MEMS actuator drivers
Replacing the standard PN junction diodes by pulse-driven DMOS transistors acting as almost ideal active diodes is another method to enhance the power efficiency
A first approach to mitigate the power losses related to the parasitic capacitance Cp is to employ the dedicated charge recycling technique of Figure 3
Summary
Integrated charge pumps are used in a wide variety of applications, going from flash memories over dedicated display drivers to MEMS actuator drivers. Some applications ask for specific features, such as high current drive capability or very good output voltage stability. Achieving high power efficiency in fully integrated Dickson charge pumps is not straightforward due to the fact that integrated capacitors exhibit considerable parasitic capacitance to the substrate, resulting in a dramatic efficiency drop. The choice of an appropriate smart power IC technology with superior transistor and integrated capacitor performance helps to boost the efficiency. In this paper, these 3 methods are described and compared
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