Full-Band Monte Carlo Simulation of Electron Transport in 3C-SiC

Abstract

A full band Monte Carlo study of the electron transport in 3C-SiC is presented based on ab initio band structure calculation using the Local Density Approximation (LDA) to the Density Functional Theory (DFT). The scattering rates and impact ionization transition rates have been calculated numerically from the band structure using both energy dispersion and wave functions. Coupling constants for the phonon interactions have been deduced by fitting the simulated mobility as a function of lattice temperature to experimental data. The saturation velocity was found to be approximately 2.2*107 cm/s with a visible negative differential mobility above 600 kV/cm. The electron initiated impact ionization coefficients were found to be 2 to 10 times stronger than reported values for the hole initiated impact ionization