Full band Monte Carlo study of high field transport in cubic phase silicon carbide

Abstract

A full band Monte Carlo study of the electron transport in 3C–SiC is presented based on an ab initio band structure calculation using the local density approximation to the density functional theory. The scattering rates and impact ionization transition rates have been calculated numerically from the ab initio band structure using both energy dispersion and numerical wave functions. This approach reduces the number of empirical parameters needed to a minimum. The two empirical coupling constants used have been deduced by fitting the simulated mobility as a function of lattice temperature to experimental data. The peak velocity was found to be approximately 2.2×107 cm/s with a clear negative differential mobility above 600 kV/cm. The electron initiated impact ionization coefficients were found to be 2–10 times stronger than the reported values for the hole initiated impact ionization.