Abstract
Mathematical modeling of thermal behavior of edge-emitting lasers requires the usage of sophisticated time-consuming numerical methods like FEM (Finite Element Method) or very complicated 3D analytical approaches. In this work, we present an approach, which is based on a relatively simple 2D analytical solution of heat conduction equation. Our method enables extremely fast calculation of two crucial physical quantities; namely, junction and mirror temperature. As an example subject of research, we chose self-made p-side-down mounted InGaAs/GaAs/AlGaAs laser. Purpose-designed axial heat source function was introduced to take into account various mirror heating mechanisms, namely, surface recombination, reabsorption of radiation, Joule, and bulk heating. Our theoretical investigations were accompanied by experiments. We used micro-Raman spectroscopy for measuring the temperature of the laser front facet. We show excellent convergence of calculated and experimental results. In addition, we present links to freely available self-written Matlab functions, and we give some hints on how to use them for thermal analysis of laser bars or quantum cascade lasers.
Highlights
Published: 26 October 2021One can safely say that the demand for high-power edge-emitting lasers will not expire in foreseeable future
In [16], we find expression for mirror heating induced by surface recombination above threshold (I ≥ Ith ): m q = hωv0
We showed that a relatively simple 2D analytical thermal model could be successfully adapted for analysis of 3Dheat flow in an edge-emitting laser
Summary
One can safely say that the demand for high-power edge-emitting lasers will not expire in foreseeable future. At least two reasons for this can be mentioned. These devices are widely used in many applications such as solid-state laser pumping, telecommunication, medicine, material processing, and 3D sensing [1,2]. Dynamic development of epitaxial or processing techniques enables constant progress in obtaining devices with better and better parameters. Multilayer semiconductor structures of precisely selected thicknesses and various chemical compositions, including the wide class of quantum cascade lasers (QCL’s) [3], allow for generation of wavelengths from a very wide range. Long resonators ( compared to surface-emitting lasers) enable effective usage of quantum dots, which usually are sparsely distributed throughout the heterostructure because of crystalline growth conditions [5]
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