Abstract
The frequency response of metal-insulator-metal (MI M) based thin film capacitors were studied using LCR bridge where diamond-like nanocomposite ( DLN) film behaves as a dielectric medium. The films were deposited by plasma assisted chemical vapour d eposition (PACVD) method. Fourier transforms infrar ed spectroscopy (FTIR) and Raman spectroscopy give the structure of DLN film. The results show that, equi valent parallel capacitance (EPC) decreases sharply beyond 10 5 Hz for thinner films. But for thicker films, there is no such decrease. This is due to some parasitic series resistance effect in the capacitor circuit. An equ ivalent circuit model for real capacitor has been establish ed. Moreover, there is also a small decrement in EP C with frequency and this effect increases with thickness of film. This may be due to lack of sufficient time for electron transportation through bulk DLN material. The DLN b ased thin film capacitor has a great potential for use in electronic/electrical system.
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