Abstract
Abstract The distribution of photoluminescence lifetime has been studied for a-Si:H/a-Si 1− x N x :H multilayers, band-edge modulated (BM) a-Si 1− x N x :H films and bulk a-Si 1− x N x :H films by means of frequency resolved spectroscopy (FRS). A peak in the lifetime distribution at 1 ms has been observed for the a-Si 1− x N x :H bulk and BM films at low temperature (11 K). We have not observed a peak shift with increasing generation rate, G , for the case of a-Si 1− x N x :H bulk and BM films. The results for multilayers of thin well (a-Si:H) layer thickness ( L W ≤1.8 nm) were similar to those for the a-Si 1− x N x :H bulk and BM films. The width of the peak of lifetime distribution around 1 ms was estimated to be within one decade in the case of the a-Si 1− x N x :H bulk, BM films, and multilayers of small L W . The temperature dependence of the lifetime distribution is weak for the multilayers of L W =0.6 nm, BM films of short modulation period ( L =3.0 nm) and the a-Si 1− x N x :H bulk film containing more nitrogen. The results are explained in terms of a triplet exciton model.
Published Version
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