Abstract
Abstract The recombination process in band-edge modulated (BM) a-Si1 − xNx:H has been studied by means of frequency resolved spectroscopy (FRS) and compared with the results for a-Si:H and a-Si1 − xNx:H bulk films. The lifetime distribution has a component peaked at approximately 1 ms for BM a-Si1 − xNx:H and bulk films. Their FRS spectra have been almost independent of generation rate in a-Si1 − xNx:H bulk and BM films. Thus the component of 1 ms for a-Si1 − xNx:H bulk and BM films is considered to be emission from triplet excitons. The temperature dependence of lifetime distribution is weak for BM films of short modulation period, L, and bulk a-Si1 − xNx:H films containing more nitrogen. The results show that the ground state of the exciton is deep for a-Si1 − xNx:H bulk films of large x and BM films of short L.
Published Version
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