Abstract
Frequency dispersion of transconductance gm(f) has been exploited to quantitatively investigate the properties of deep trap in III-V FET devices, namely DX centres in GaAs/AlGaAs HEMTs. This method requires simple data acquisition and elaboration and is applied directly to packaged devices. Thermal emission energy Ea = 0.46 eV and capture cross-section σ = 3×10−14 cm2 have been obtained for DX centers in AlGaAs, in good agreement with published data. By increased VDS, we measured also an Ea decrease due to hot electron trapping by the DX centres.
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