Abstract
Abstract A study of RF signal frequency multiplication and mixing with simultaneous surface acoustic wave (SAWrpar; excitation by a reverse-biased Al interdigital transducer on epitaxial GaAs has been performed. The dependence of SAW excitation efficiency and excited wave phase on the bias voltage applied to the transducer have been measured. The frequency responses of tunable SAW devices on n-GaAs wafers are presented.
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