Abstract
The radicals formed by the reaction of SiH4 with H produced by the photolysis of HI in the matrices of Xe and Kr were investigated by electron spin resonance (ESR) spectroscopy at the temperatures between 4.2 and 100 K. The radicals observed were identified as SiH3 and SiH5. The newly observed radical SiH5 is considered as the intermediate of the reaction SiH4+H→SiH3+H2. The radical had two conformers; both were observed in a Xe matrix, while only one was observed in a Kr matrix. The ESR parameters of these radicals were determined by numerical deconvolution of the observed spectra. The hyperfine coupling of 29Si in silyl radicals isolated in Kr was determined accurately by the present method of the radical formation. The value obtained was 189.5 G instead of 266 G previously reported.
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