Abstract
We have developed a computationally-tractable first-principles approach (based on density-functional and many-body perturbation theories) to treat the indirect absorption of light by free carriers in semiconductors and insulators and applied it to the technologically important class of group-III nitrides. Indirect absorption by free and impurity-bound carriers, mediated by electron-phonon, charged-defect, and alloy scattering, is an important loss mechanism which may explain the origin of the observed absorption loss in nitride laser devices. The electron-phonon interaction is calculated entirely from first principles, allowing us to validate the commonly used Fr\ohlich approximation. The formalism is quite general and can be applied to other cases where carrier-induced absorption is a concern, such as in transparent conducting oxides.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
