Abstract
In the region of the band edge of a degenerate $n$-type InSb sample, at fixed wavelength, oscillations in the absorption have been observed which are periodic in $\frac{1}{H}$. The period of these oscillations yields information about the Fermi surface. In the region of free carrier absorption oscillations in the absorption have been observed which are periodic in $\frac{1}{H}$, the period yielding the free carrier effective mass. The two measurements hold promise of an optical means of measuring both carrier concentration and effective mass of free carriers in semiconductors.
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