Abstract
We have examined the structure of Ge 1− x Sn x Se 2 in the composition range 0.00 ⩽ x ⩽ 0.70 using differential scanning calorimetry (DSC) and Raman spectroscopy. The DSC measurements show a monotonic decrease in both the glass transition and crystallization temperatures upon increasing x, while the Raman spectra, which can be separated into contributions from Ge( Se 1 2 ) 4 and Sn( Se 1 2 ) 4 tetrahedra, show a decrease in the energies of the tetrahedral breathing modes and a change in the relative intensities of the different tetrahedral modes as the Sn concentration is increased. To interpret these results, we have proposed a model in which the addition of Sn causes a fragmentation of the molecular cluster network of amorphous GeSe 2 with the Sn atoms occupying tetrahedral sites on the edges of the molecular clusters.
Published Version
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