Chemical bond approach to glass transition temperature and crystallization activation energy in Se 90In 10− xSn x (2 ≤ x ≤ 8) semiconducting glasses

Abstract

Ternary chalcogenide glasses Se 90In 10− x Sn x (2 ≤ x ≤ 8 at.%) have been prepared by melt quenching technique. Differential scanning calorimeter (DSC) has been used to determine the glass transition temperature T g, onset T c and peak T p temperatures of crystallization. The variation of both T c and T p with the heating rate has been utilized to calculate the activation energy of crystallization E c, under non-isothermal condition, using Kissinger, Ozawa, Augis and Bennet and Takhor models. Results reveal that both T g and E c decrease with the addition of Sn up to 6 at.% with sharp increase in both values at 8 at.% and the crystal growth occurs in one-dimension. The overall mean bond energy 〈 E〉 is found to decrease with Sn concentration and the correlation of both T g and E c with 〈 E〉 is linear up to 6 at.% of Sn where as at 8 at.%, deviation from linearity is observed and an empirical relation of the form T g ( or E c ) = ∑ i = 0 3 C i 〈 E 〉 i has been suggested to describe such behavior. The obtained crosslinking parameter P rich and R-values reveal the occurrence of chemically stable composition at higher percentages of Sn.