Fractional Quantization of the Hall Effect

Abstract

Fractional quantization of the Hall effect and the two-dimensional structures in which it occurs are described. The fractional quantization to date has been observed in high mobility modulation-doped AlxGa1−xAs/GaAs heterostructures at high magnetic fields and low temperatures where all electrons lie in the lowest Landau level. At certain fractional Landau level occupations v = p/q (q = 3, 5, 7; p = 1, 2, 3...) minima and Hall resistance plateaus develop. The value of the Hall resistance, ρ xy, approaches h/ve2 at the plateaus. The observed phenomena and their temperature dependence suggest the occurrence of a series of correlated electron states at fractional occupation of the lowest Landau level. Both two-dimensional electron and hole systems exhibit fractional quantization.KeywordsHall EffectLandau LevelFractional FillingFractional QuantizationHall ResistanceThese keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.