Abstract
Fractional quantization of the Hall effect and the two-dimensional structures in which it occurs are described. The fractional quantization to date has been observed in high mobility modulation-doped AlxGa1−xAs/GaAs heterostructures at high magnetic fields and low temperatures where all electrons lie in the lowest Landau level. At certain fractional Landau level occupations v = p/q (q = 3, 5, 7; p = 1, 2, 3...) minima and Hall resistance plateaus develop. The value of the Hall resistance, ρ xy, approaches h/ve2 at the plateaus. The observed phenomena and their temperature dependence suggest the occurrence of a series of correlated electron states at fractional occupation of the lowest Landau level. Both two-dimensional electron and hole systems exhibit fractional quantization.
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