Abstract
Fowler-Nordheim (FN) tunneling of holes in metal-Er2O3–Si structures is confirmed. The effective mass of holes in Er2O3 films is estimated ranging from 0.068m to 0.092m, where m is the free electron mass. The film shows a high breakdown electric field of about 70MV∕cm for an Er2O3 film thickness of 8.5nm, implying that the film which is epitaxially grown on Si substrate has smooth interface and surface.
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