Abstract
Making use of the RF magnetron sputtering technique, we have succeeded in fabricating ZnO films where c-axis of crystallites are unidirectionally aligned in the plane, without the mechanism of epitaxy. The alignment of c-axis in the plane was then carefully investigated by the X-ray pole figure analysis and atomic force microscope measurements. From these results, we have revealed the effect of substrate position during sputtering on the c-axis alignment in the plane. We have also pointed out the important effect of the oxygen ions in the RF plasma on the (1 1 2¯ 0) texture formation.
Published Version
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