Abstract
We have demonstrated the formation of ultrathin Ni silicide on SiO2 by annealing Si/Ni/Si structures and have systematically evaluated the impacts of the Si layer thickness on oxidation, surface roughening and the silicidation reaction. X-ray photoelectron spectroscopy analyses revealed that suppression of Ni oxidation due to the top Si layer makes it possible to form an ultrathin Ni silicide layer with a thickness of around 2 nm. Then, it turned out that the composition ratio of Ni and Si depends on not only the annealing temperature but also the initial thickness ratio of the top and bottom Si layers. Furthermore, this work clarified that the ultra-thin top Si layer has a large impact on the surface morphology during Ni silicide formation with diffusion and preferential oxidation.
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