Epitaxial Growth of SiC on Silicon on Insulator Substrates with Ultrathin Top Si Layer by Hot-Mesh Chemical Vapor Deposition

Abstract

The epitaxial growth of SiC on silicon-on-insulator (SOI) substrates with an ultrathin (<10 nm) top Si layer by hot-mesh chemical vapor deposition (CVD) was investigated. This method utilizes heated tungsten wires arranged in a mesh, which promotes the high decomposition efficiency of H2 gas. Using the hot-mesh CVD method, SiC epitaxial films were successfully grown on SOI substrates without voids being formed, which are formed readily in thin (<100 nm) top Si layers at temperatures above 800 °C. Some micropatterns for micro-electro-mechanical systems were fabricated on SiC on insulator (SiCOI) structure substrates by reactive ion etching and wet etching.