Abstract
Fe thin films have been deposited on stepped Si(100) surfaces under ultra high vacuum (uhv) conditions and investigated by X-ray-induced Auger electron spectroscopy (XAES) and photoelectron spectroscopy (XPS). The results suggest that even at room temperature a slight Si interdiffusion occurs into the Fe layers, giving rise to an intermixed FeSi phase. With increasing coverage (Θ ⩾ 15 A ̊ ) the surface composition becomes Fe richer, and an almost pure Fe film grows on top of the interfacial compound.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
