Formation of shallow donors and acceptors in silicon irradiated with either electrons or high‐energy ions and annealed at temperatures of 400–700 °C

Abstract

The formation of electrically active shallow centers in electron-irradiated (the case of uniform generation of radiation defects) silicon and crystals implanted with high-energy ions (non-uniform generation of radiation defects) under annealing at temperatures of 400–700 °C was investigated. Non-uniform generation of thermal donors and thermal acceptors was found for both cases at 450 °C. Formation of domains with p- and n-type conductivity was observed in the electron-irradiated silicon.