Progress in Study of Oxygen-Related Defects in Electron Irradiated CZ-Si

Abstract

Electron irradiation on silicon results in the creation of vacancy (V) and silicon self-interstitial (I).Vacancy tends to integrate with oxygen and forms the complexes of vacancy and oxygen (VmOn)such as VO, VO2, and VO3. These complexes of vacancy and oxygen in silicon have been the subject of extended investigations by standard methods such as infrared absorption. In infrared spectrum, the different VmOnhas the corresponding peak. Irradiation induced defects as the core of oxygen precipitate can accelerate the oxygen precipitation. Oxygen precipitation plays an important role in the internal gettering (IG). In electron irradiated silicon, annealing at 300700 °C leads to the formation of two types of electrically active centers that are shallow thermal acceptors (TAs) and the well-known thermal donors (TDs). In this paper, the generation conditions, the infrared peaks of VmOn, the types of oxygen precipitation induced defects, the characters of TAs and TDs are studied.