Abstract
It is proposed that electromigration on semiconductor surfaces can be utilized at the initial stage of formation of well-controlled interface structures. Advantages and properties related to the electromigration, namely, the lateral growth of a characteristic intermediate metal-layer in direct contact with the clean semiconductor surface, the driving force of the mass transport and occasional enhancement of the lateral-growth rate in the presence of surface atomic steps on the semiconductor surface are described.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
