Abstract
Photoemission energy distribution spectra of clean metal and semiconductor surfaces are interpreted in terms of emission from electronic states characteristic of both the surface and 'infinite' bulk crystal. The photoexcitation matrix element is shown to depend on the degree of localization of the final-state wavefunction at the surface. Using the concept that the emitted electron is represented by an incoming plane wave, spectral regimes and experimental conditions are defined which are expected to give enhanced surface sensitivity. Experimental results are presented to illustrate the nature of the surface and volume photoelectric effect in nearly-free-electron metals, semiconductors, and transition metals.
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